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MMBD,SMMBD914LTxG

ON Semiconductor

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Datasheet

© Semiconductor Components Industries, LLC, 1994
January, 2019 Rev. 10
1Publication Order Number:
MMBD914LT1/D
MMBD914L
High-Speed Switching
Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage VR100 V
Forward Current IF200 mA
NonRepetitive Peak Forward Surge Current
t = 1 sec
t = 1 sec
IFSM 1.0
2.0
A
Peak Forward Surge Current IFM(surge) 500 mA
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, JunctiontoAmbient
RJA 556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, JunctiontoAmbient
RJA 417 °C/W
Junction and Storage Temperature Range TJ, Tstg 55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device Package Shipping
ORDERING INFORMATION
SOT23
CASE 318
STYLE 8
MARKING DIAGRAM
1
ANODE
3
CATHODE
MMBD914LT1G SOT23
(PbFree)
3,000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBD914LT3G SOT23
(PbFree)
10,000 /
Tape & Reel
1
5D MG
G
5D = Device Code
M = Date Code*
G= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
SMMBD914LT1G SOT23
(PbFree)
3,000 /
Tape & Reel
SMMBD914LT3G SOT23
(PbFree)
10,000 /
Tape & Reel
www.onsemi.com
MMBD914L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 Adc)
V(BR) 100 Vdc
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
IR
25
5.0
nAdc
Adc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT4.0 pF
Forward Voltage
(IF = 10 mAdc)
VF1.0 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr 4.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820
0.1 F
DUT
VR
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
MMBD914L
www.onsemi.com
3
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
1.0
10
100
0.1
Figure 3. Leakage Current
VR, REVERSE VOLTAGE (VOLTS)
10
0
I
1.0
0.1
0.001
0.01
10 20 30 40 50
I
1.0 1.20.2 0.4 0.6 0.8
Figure 4. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
0
C
0.68
0.64
0.60
0.52
0.56
2.0 4.0 6.0 8.0
, FORWARD CURRENT (mA)
F
TA = 85°CTA = -40°C
TA = 25°C
, REVERSE CURRENT ( A)
R
, DIODE CAPACITANCE (pF)
D
TA = 25°C
TA = 55°C
TA = 85°C
TA = 150°C
TA = 125°C
MMBD914L
www.onsemi.com
4
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AS
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
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MMBD914LT1/D
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