ANBON SEMICONDUCTOR (INT'L) LIMITED Single Diodes

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4148WS DIODE STANDARD 75V 150MA SOD323 ANBON SEMICONDUCTOR (INT'L) LIMITED	1,01,301 In Stock	1 : ₹8.59000 Cut Tape (CT) 3,000 : ₹1.32786 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	Standard	75 V	150mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
1N4148WT DIODE STANDARD 75V 150MA SOD523 ANBON SEMICONDUCTOR (INT'L) LIMITED	77,660 In Stock	1 : ₹8.59000 Cut Tape (CT) 8,000 : ₹1.23209 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	Standard	75 V	150mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-55°C ~ 150°C
RS1D-A DIODE STANDARD 200V 1A DO214AC ANBON SEMICONDUCTOR (INT'L) LIMITED	8,332 In Stock	1 : ₹8.59000 Cut Tape (CT) 2,000 : ₹1.85909 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	Standard	200 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 200 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1D-A DIODE STANDARD 200V 1A DO214AC ANBON SEMICONDUCTOR (INT'L) LIMITED	8,114 In Stock	1 : ₹8.59000 Cut Tape (CT) 2,000 : ₹1.52197 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	Standard	200 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BAV21WS DIODE STANDARD 250V 200MA SOD323 ANBON SEMICONDUCTOR (INT'L) LIMITED	11,660 In Stock	1 : ₹9.45000 Cut Tape (CT) 3,000 : ₹1.78193 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	Standard	250 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 250 V	5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
BAV21W DIODE STANDARD 250V 200MA SOD123 ANBON SEMICONDUCTOR (INT'L) LIMITED	4,444 In Stock	1 : ₹9.45000 Cut Tape (CT) 3,000 : ₹1.78193 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	Standard	250 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 250 V	5pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
30SQ045 DIODE SCHOTTKY 45V 30A AXIAL ANBON SEMICONDUCTOR (INT'L) LIMITED	9,639 In Stock	1 : ₹116.81000 Cut Tape (CT) 1,500 : ₹32.91705 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	Schottky	45 V	30A	550 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 45 V	-	Through Hole	Axial	Axial	-55°C ~ 200°C
40SQ045 DIODE SCHOTTKY 45V 40A AXIAL ANBON SEMICONDUCTOR (INT'L) LIMITED	2,256 In Stock	1 : ₹162.33000 Cut Tape (CT) 1,500 : ₹48.06405 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	Schottky	45 V	40A	550 mV @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 45 V	-	Through Hole	Axial	Axial	-55°C ~ 200°C
AS3D020065A DIODE SIL CARBIDE 650V 56A TO220 ANBON SEMICONDUCTOR (INT'L) LIMITED	137 In Stock	1 : ₹470.68000 Bulk	-	Bulk	Active	SiC (Silicon Carbide) Schottky	650 V	56A	1.65 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	1190pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
ASZD020120C 1200V,20A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED	30 In Stock	30 : ₹191.16267 Tape & Reel (TR)	*	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-
AS3D030065C DIODE SIL CARB 650V 35A TO2472 ANBON SEMICONDUCTOR (INT'L) LIMITED	27 In Stock	1 : ₹715.46000 Tube	-	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	35A	1.8 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	1805pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
1N4148W DIODE STANDARD 75V 150MA SOD123 ANBON SEMICONDUCTOR (INT'L) LIMITED	18 In Stock	1 : ₹8.59000 Cut Tape (CT)	-	Cut Tape (CT)	Active	Standard	75 V	150mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	2.5 µA @ 75 V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
SD103AWS DIODE SCHOTTKY 40V 350MA SOD323 ANBON SEMICONDUCTOR (INT'L) LIMITED	0 In Stock Check Lead Time	Active	-		Active	Schottky	40 V	350mA	600 mV @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	10 ns	5 µA @ 30 V	50pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 125°C
B5819WS DIODE SCHOTTKY 40V 1A SOD323 ANBON SEMICONDUCTOR (INT'L) LIMITED	0 In Stock Check Lead Time	Active	-		Active	Schottky	40 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	120pF @ 4V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 125°C
AS4D040120P2 1200V,40A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED	0 In Stock Check Lead Time	Active	-		Active	-	-	-	-	-	-	-	-	-	-	-	-

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Types of Rectifier Diodes

Standard Rectifier Diodes

Standard Diodes (Silicon PN Junction)
Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

Schottky Barrier Diodes (SBD)
Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

Super Barrier Rectifiers (SBR)
Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

Avalanche Diodes
Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.

Silicon Carbide (SiC) Diodes
SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.

ANBON SEMICONDUCTOR (INT'L) LIMITED Single Diodes

Types of Rectifier Diodes

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