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BSS192PH6327FTSA1 P-Channel 250V 190mA (Ta) 1W (Ta) Surface Mount PG-SOT89
Price & Procurement
21,408 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.53000 $0.53
10 0.45800 $4.58
25 0.42720 $10.68
100 0.31720 $31.72
500 0.24766 $123.83

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : BSS192PH6327FTSA1TR-ND
  • Minimum Quantity: 1,000
  • Quantity Available: 21,000 - Immediate
  • Unit Price: $0.20130

BSS192PH6327FTSA1

Datasheet
Digi-Key Part Number BSS192PH6327FTSA1CT-ND
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Manufacturer

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Manufacturer Part Number BSS192PH6327FTSA1
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Description MOSFET P-CH 250V 0.19A SOT-89
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Detailed Description

P-Channel 250V 190mA (Ta) 1W (Ta) Surface Mount PG-SOT89

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Documents & Media
Datasheets BSS192P
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin PCN 2016-052-A Retraction 25/Apr/2017
PCN Packaging Mult Dev Cover Tape Chg 9/Mar/2020
Mult Dev Pkg Update 28/May/2020
HTML Datasheet BSS192P
Simulation Models OptiMOS™ Power MOSFET 250V P-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series SIPMOS®
Packaging Cut Tape (CT) 
Part Status Not For New Designs
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Rds On (Max) @ Id, Vgs 12Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 104pF @ 25V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT89
Package / Case TO-243AA
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names BSS192PH6327FTSA1CT