MMBT2222A Datasheet by STMicroelectronics

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MMBT2222A
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
■SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
■MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
■TAPE & REEL PACKING
■THE PNP COMPLEMENTARY TYPE IS
MMBT2907A
APPLICATIONS
■WELL SUITABLE FOR PORTABLE
EQUIPMENT
■SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
February 2003
SOT-23
Type Marking
MMBT2222A M22
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Emitter Voltage (IE = 0) 75 V
VCEO Collector-Emitter Voltage (IB = 0) 40 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
ICCollector Current 0.6 A
ICM Collector Peak Current (tp < 5 ms) 0.8 A
Ptot Total Dissipation at Tamb = 25 oC 350 mW
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
®
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THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient Max 357.1 oC/W
• Device mounted on a PCB area of 1 cm2 .
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEX Collector Cut-off
Current (VBE = -3 V) VCE = 60 V 10 nA
IBEX Base Cut-off Current
(VBE = -3 V) VCE = 60 V 20 nA
ICBO Collector Cut-off
Current (IE = 0) VCB = 75 V
VCB = 75 V Tj = 150 oC10
10 nA
µA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 3 V 15 nA
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA 40 V
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = 10 µA75 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10 µA6V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC = 150 mA IB = 15 mA
IC = 500 mA IB = 50 mA 0.3
1V
V
VBE(sat)∗Collector-Base
Saturation Voltage IC = 150 mA IB = 15 mA
IC = 500 mA IB = 50 mA 0.6 1.2
2V
V
hFE∗DC Current Gain IC = 0.1 mA VCE = 10 V
IC = 1 mA VCE = 10 V
IC = 10 mA VCE = 10 V
IC = 150 mA VCE = 10 V
IC = 150 mA VCE = 1 V
IC = 500 mA VCE = 10 V
35
50
75
100
50
40
300
fTTransition Frequency IC = 20 mA VCE = 20V f = 100MHz 270 MHz
CCBO Collector-Base
Capacitance IE = 0 VCB = 10 V f = 1 MHz 4 8 pF
CEBO Emitter-Base
Capacitance IC = 0 VEB = 0.5 V f = 1MHz 20 25 pF
NF Noise Figure IC = 0.1 mA VCE = 10 V f = 1 KHz
∆f = 200 Hz RG = 1 KΩ4dB
h
ie∗Input Impedance VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz 2
0.25 8
1.25 KΩ
KΩ
hre∗Reverse Voltage Ratio VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz 8
410-4
10-4
hfe∗Small Signal Current
Gain VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz 50
75 300
375
hoe∗Output Admittance VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz 5
25 35
200 µS
µS
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
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ELECTRICAL CHARACTERISTICS (Continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tdDelay Time IC = 150 mA IB = 15 mA
VCC = 30 V 510ns
t
rRise Time 12 25 ns
tsStorage Time IC = 150 mA IB1 = - IB2 = 15 mA
VCC = 30 V 185 225 ns
tfFall Time 24 60 ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
MMBT2222A
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)k > M
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DIM. mm mils
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G2.1 2.582.6 98.4
H 0.38 0.48 14.9 18.8
L0.3 0.611.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
0044616/B
SOT-23 MECHANICAL DATA
MMBT2222A
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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MMBT2222A
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