DMN61D8LVTQ Inductive-Load Driver

Diodes' DMN61D8LVTQ on-chip integrated Zener diode and bias resistor eliminates the need for several external components, saving cost and reducing the PCB footprint.

Inductive-load-switching normally requires a freewheeling diode to suppress the voltage spike that typically results when the switch is opened. The DMN61D8LVTQ inductive load driver avoids this requirement by using a low-side circuit configuration that employs back-to-back Zener diodes to provide an active over-voltage drain clamp of the internal MOSFET. The MOSFET is also protected from potentially destructive transient voltages by ensuring that this clamp voltage is set below the MOSFET's avalanche breakdown voltage.

The input features ESD protection provided by further Zener stacks. The MOSFET is rated with a drain-source voltage (VDS) of 60 V and a maximum gate-source voltage (VGS) of ±12 V. The DMN61D8LVTQ inductive-load driver is available in the TSOT26 package.