ePower™ Chipset

EPC's ePower chipset integrates 100 V GaN drivers and FETs up to 65 A, offering high performance and a small solution size for high power density applications including DC/DC conversion and motor drives. The EPC23101 eGaN® IC plus EPC2302 eGaN® FET offers an ePower chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current and capable of switching speeds greater than 1 MHz. The EPC2302 eGaN FET offers a super small R_DS(on) of just 1.8 mΩ together with very small QG, QGD, and QOSS parameters for low conduction and switching losses. Both devices feature a thermally-enhanced QFN package with an exposed top and optimized pinout between the two devices. The combined chipset footprint is 7 mm x 5 mm, offering an extremely small solution size for high power density applications.