Name: IXTA1R6N100D2HV
Brand: IXYS
SKU: 238-IXTA1R6N100D2HV-ND
Price: 570.07 INR
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXTA1R6N100D2HV
DigiKey Part Number	238-IXTA1R6N100D2HV-ND
Manufacturer	IXYS
Manufacturer Product Number	IXTA1R6N100D2HV
Description	MOSFET N-CH 1000V 1.6A TO263HV
Manufacturer Standard Lead Time	32 Weeks
Customer Reference
Detailed Description	N-Channel, Depletion Mode 1000 V 1.6A (Tj) 100W (Tc) Surface Mount TO-263HV
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	IXYS
Series	Depletion
Packaging	Tube
Part Status	Active
FET Type	N-Channel, Depletion Mode
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	0V
Rds On (Max) @ Id, Vgs	10Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id	4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	645 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263HV
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	IXTA1