Name: RBE029N10R1SZN6#HB0
Brand: Renesas Electronics Corporation
SKU: 559-RBE029N10R1SZN6#HB0TR-ND
Price: 270.24 INR
Availability: InStock

New Product

N-Channel 100 V 160A (Tc) 165W (Tc) Surface Mount 8-DFN (4.9x5.75)

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RBE029N10R1SZN6#HB0
DigiKey Part Number	559-RBE029N10R1SZN6#HB0TR-ND - Tape & Reel (TR) 559-RBE029N10R1SZN6#HB0CT-ND - Cut Tape (CT) 559-RBE029N10R1SZN6#HB0DKR-ND - Digi-Reel®
Manufacturer	Renesas Electronics Corporation
Manufacturer Product Number	RBE029N10R1SZN6#HB0
Description	MOSFET N-CH 100V 160A 8DFN
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 160A (Tc) 165W (Tc) Surface Mount 8-DFN (4.9x5.75)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Renesas Electronics Corporation
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 109µA
Gate Charge (Qg) (Max) @ Vgs	91 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6500 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	165W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-DFN (4.9x5.75)
Package / Case	8-PowerTDFN