N-Channel 650 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO262-3
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IPI65R190C6XKSA1

DigiKey Part Number
2156-IPI65R190C6XKSA1-448-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IPI65R190C6XKSA1
Description
IPI65R190C6 - 650V-700V COOLMOS
Customer Reference
Detailed Description
N-Channel 650 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO262-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolMOS™
Packaging
Bulk
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id
3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1620 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
151W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
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In-Stock: 1,474
Non-Cancelable/Non-Returnable
MARKETPLACE PRODUCT
Will ship in approximately 10 days from Rochester Electronics LLC
A separate ₹8,945.86 flat rate shipping fee will apply
Quantity
All prices are in INR
Bulk
QuantityUnit PriceExt Price
139₹201.28173₹27,978.16