STB11NM60-1 is Obsolete and no longer manufactured.
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N-Channel 650 V 11A (Tc) 160W (Tc) Through Hole I2PAK
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB11NM60-1

DigiKey Part Number
497-5379-5-ND
Manufacturer
Manufacturer Product Number
STB11NM60-1
Description
MOSFET N-CH 650V 11A I2PAK
Customer Reference
Detailed Description
N-Channel 650 V 11A (Tc) 160W (Tc) Through Hole I2PAK
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Obsolete
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
Base Product Number
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Obsolete
This product is no longer manufactured. View Substitutes