Name: TPW1R306PL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPW1R306PLL1QTR-ND
Price: 302.6 INR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPW1R306PL,L1Q
DigiKey Part Number	TPW1R306PLL1QTR-ND - Tape & Reel (TR) TPW1R306PLL1QCT-ND - Cut Tape (CT) TPW1R306PLL1QDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPW1R306PL,L1Q
Description	MOSFET N-CH 60V 260A 8DSOP
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance
cms-datasheet	cms-datasheet
EDA/CAD Models	TPW1R306PL,L1Q Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	91 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8100 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 170W (Tc)
Operating Temperature	175°C
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerVDFN
Base Product Number	TPW1R306