Name: TTD1409B,S4X
Brand: Toshiba Semiconductor and Storage
SKU: 264-TTD1409BS4X-ND
Price: 246.94 INR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TTD1409B,S4X
DigiKey Part Number	264-TTD1409BS4X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TTD1409B,S4X
Description	TRANS NPN DARL 400V 6A TO-220SIS
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 400 V 6 A 2 W Through Hole TO-220SIS
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors
Mfr	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	6 A
Voltage - Collector Emitter Breakdown (Max)	400 V
Vce Saturation (Max) @ Ib, Ic	2V @ 40mA, 4A
Current - Collector Cutoff (Max)	20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	600 @ 2A, 2V
Power - Max	2 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220SIS
Base Product Number	TTD1409

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Tube