N-Channel 650 V 30A (Tc) 208W (Tc) Through Hole TO-220AB
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SIHP100N65E-GE3

DigiKey Part Number
742-SIHP100N65E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP100N65E-GE3
Description
E SERIES POWER MOSFET 650 V (D-
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 30A (Tc) 208W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
Product Attributes
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Category
Rds On (Max) @ Id, Vgs
100mOhm @ 12A, 10V
Mfr
Vgs(th) (Max) @ Id
5V @ 250µA
Series
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 10 V
Packaging
Tube
Vgs (Max)
±30V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
2137 pF @ 100 V
FET Type
Power Dissipation (Max)
208W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-220AB
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 1,000
Check for Additional Incoming Stock
All prices are in INR
Tube
QuantityUnit PriceExt Price
1₹985.91000₹985.91
10₹678.02100₹6,780.21
100₹504.07100₹50,407.10
500₹430.04966₹2,15,024.83
1,000₹422.36555₹4,22,365.55
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.