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N-Channel 650 V 12A (Tc) 156W (Tc) Through Hole TO-220AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHP12N65E-GE3

DigiKey Part Number
SIHP12N65E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP12N65E-GE3
Description
MOSFET N-CH 650V 12A TO220AB
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 12A (Tc) 156W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
SIHP12N65E-GE3 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Packaging
Tube
Vgs (Max)
±30V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
1224 pF @ 100 V
FET Type
Power Dissipation (Max)
156W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-220AB
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (11)
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AOT11S65LAlpha & Omega Semiconductor Inc.0785-1510-5-ND₹0.00000Similar
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IPP65R420CFDXKSA1Rochester Electronics, LLC30,3332156-IPP65R420CFDXKSA1-ND₹157.48433Similar
IXFP22N60P3IXYS219IXFP22N60P3-ND₹705.42000Similar
In-Stock: 0
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All prices are in INR
Tube
QuantityUnit PriceExt Price
1₹308.45000₹308.45
10₹200.44300₹2,004.43
100₹138.78190₹13,878.19
500₹112.41772₹56,208.86
1,000₹103.94805₹1,03,948.05
2,000₹96.82818₹1,93,656.36
5,000₹89.12905₹4,45,645.25
10,000₹89.10911₹8,91,091.10
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.