VideoLibrary

Silicon Carbide (SiC) Business

SiC provides a number of benefits over silicon, including faster switching performance, higher voltage capability, and lower ON resistance.

2/6/2023 8:40:46 PM

Part List

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
DIODE ARRAY SIC 1200V 15A TO-247SCS230KE2HRC11DIODE ARRAY SIC 1200V 15A TO-2472 - Immediate$930.88View Details
MOSFET 2N-CH 1200V 80A MODULEBSM080D12P2C008MOSFET 2N-CH 1200V 80A MODULE0 - Immediate$28,284.99View Details
MOSFET 2N-CH 1200V 180A MODULEBSM180D12P3C007MOSFET 2N-CH 1200V 180A MODULE13 - Immediate$49,983.69View Details
DIODE SIC 650V 12A TO220ACFPSCS212AGC17DIODE SIC 650V 12A TO220ACFP933 - Immediate$593.67View Details
DIODE SIC 650V 2.15A TO220ACPSCS302AHGC9DIODE SIC 650V 2.15A TO220ACP643 - Immediate$263.56View Details
DIODE SIC 1.2KV 5A TO220ACFPSCS205KGC17DIODE SIC 1.2KV 5A TO220ACFP1000 - Immediate$582.13View Details
DIODE SIC 1.2KV 10A TO220ACFPSCS210KGC17DIODE SIC 1.2KV 10A TO220ACFP314 - Immediate$834.16View Details
DIODE SIC 1.2KV 20A TO220ACFPSCS220KGC17DIODE SIC 1.2KV 20A TO220ACFP995 - Immediate$1,103.93View Details
DIODE ARRAY SIC 650V 15A TO-247NSCS230AE2HRC11DIODE ARRAY SIC 650V 15A TO-247N545 - Immediate$1,062.22View Details
DIODE ARR SIC 1200V 10A TO-247NSCS220KE2HRC11DIODE ARR SIC 1200V 10A TO-247N0 - Immediate$1,416.29View Details
DIODE ARRAY SIC 1200V 5A TO-247SCS210KE2HRC11DIODE ARRAY SIC 1200V 5A TO-247450 - Immediate$982.35View Details
DIODE ARRAY SIC 650V 20A TO-247NSCS240AE2HRC11DIODE ARRAY SIC 650V 20A TO-247N0 - Immediate$1,336.42View Details
DIODE ARRAY SIC 650V 10A TO-247NSCS220AE2GC11DIODE ARRAY SIC 650V 10A TO-247N283 - Immediate$901.60View Details
DIODE ARRAY SIC 650V 10A TO-247NSCS220AE2HRC11DIODE ARRAY SIC 650V 10A TO-247N199 - Immediate$922.90View Details
DIODE ARR SIC 1200V 20A TO-247NSCS240KE2GC11DIODE ARR SIC 1200V 20A TO-247N154 - Immediate$2,178.57View Details
MOSFET 2N-CH 1200V 300A MODULEBSM300D12P2E001MOSFET 2N-CH 1200V 300A MODULE8 - Immediate$63,045.33View Details
DIODE SIL CARB 650V 8A TO220ACFPSCS208AGC17DIODE SIL CARB 650V 8A TO220ACFP886 - Immediate$257.35View Details
DIODE SIL CARB 650V 10A TO220ACPSCS310AHGC9DIODE SIL CARB 650V 10A TO220ACP0 - ImmediateSee Page for PricingView Details
MOSFET IPM 1.2KV 134A MODULEBSM120C12P2C201MOSFET IPM 1.2KV 134A MODULE7 - Immediate$26,493.33View Details
DIODE SIL CARB 650V 4A TO220ACPSCS304AHGC9DIODE SIL CARB 650V 4A TO220ACP52 - Immediate$345.20View Details

Related Videos

ROHM'S 4th Generation of Silicon Carbide MOSFETs | First Look
ROHM'S 4th Generation of Silicon Carbide MOSFETs | First Look

Publish Date: 2023-09-20

High accuracy current monitoring contributes to improved application reliability
High accuracy current monitoring contributes to improved application reliability

Publish Date: 2023-06-22

Midnite Solar's Inverters and Charger Systems
Midnite Solar's Inverters and Charger Systems

Publish Date: 2023-02-06

Related Product Highlight

4th Generation Silicon Carbide SiC MOSFETs ROHM's 4th generation silicon carbide MOSFETs are designed to deliver unparalleled efficiency and performance in demanding applications.
4th Generation SiC MOSFETs ROHM's 4th generation SiC MOSFETs feature low switching loss and support for 15 V gate-source voltage that contributes to device power savings.
BD3430 DAC Chip - MUS-ICT™ Series ROHM’s MUS-ICT series contains the BD3430 DAC chip, a high-grade audio IC.

Related Articles and Blogs

How to Reduce Losses, Improve Efficiency, and Extend Temperature Range in High-Power Applications Designers can use 4th generation SiC MOSFETs to greatly improve efficiency, lower the cost, and reduce the size of high-voltage, high-power control circuits.
Wide Bandgap Semiconductors Are Reshaping the Transportation World The entire transportation sector is undergoing a radical transformation with solutions for electric and hybrid cars and cleaner mass transportation.
Wide Band Gap Semiconductors in Aerospace and Satellite Applications Wide Band Gap semiconductors bring several advantages in power conversion, such as increased power density and efficiency, and reducing system size and weight.

Related Product Training Modules

High-Power Devices for EV DC Fast-Charging Stations ROHM's power device offerings for DC fast-charging stations include silicon carbide (SiC), insulated gate bipolar transistor (IGBT), and super junction MOSFETs.
Industrial Motor Products: Part 1 - Power Devices/Gate Drivers ROHM’s power devices and gate drivers are optimized for industrial motor end applications.
4th Generation SiC MOSFETs This presentation will provide a brief overview of ROHM’s latest SiC trench MOSFETs and their advantages for power electronics applications.