Micro Commercial Components' pin diode is a semiconductor device that operates as a variable resistor at RF and microwave frequencies. Compared with a normal PN diode, it is a silicon semiconductor in which a high resistive Intrinsic I region is sandwiched between a P- type and N- type region branding the device: PIN diode.
The typical applications include cellular phone, LNB, STB, car radio, CATV, base station, WLAN, and Bluetooth.
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- High frequencies application
- Board space saving
- Low diode capacitance
- Low diode forward resistance
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- Halogen free version available upon request
- Contacts: 100% matte tin plating
- RoHS compliant
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| SOD-323 |
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SOT-23 |
- Continuous reverse voltage: 50 V
- Forward current: 50 mA
- Power dissipation(TA=90°C): 200 mW
- Junction and storage temperature: -65°C to 150°C
- Thermal resistance junction to ambient: 85 K/W
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- Continuous reverse voltage: 175 V
- Forward current: 100 mA
- Power dissipation(TA=90°C): 250 mW
- Junction and storage temperature: -65°C to 150°C
- Thermal resistance junction to ambient: 500 °C/W
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| SOT-323 |
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SOD-523 |
- Continuous reverse voltage: 175 V
- Forward current: 100 mA
- Power dissipation(TA=90°C): 200 mW
- Junction and storage temperature: -65°C to 150°C
- Thermal resistance junction to ambient: 625 °C/W
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- Continuous reverse voltage: 60 V
- Forward current: 50 mA
- Power dissipation(TA=90°C): 715 mW
- Junction and storage temperature: -65°C to 150°C
- Thermal resistance junction to ambient: 85 K/W
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Micro Commercial Components' pin diode is a semiconductor device that operates as a variable resistor at RF and microwave frequencies. Compared with a normal PN diode, it is a silicon semiconductor in which a high resistive Intrinsic I region is sandwiched between a P- type and N- type region branding the device: PIN diode.
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