ADL9006 Amplifiers

 Analog Devices' ADL9006 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier provides 15.5 dB of gain, 2.5 dB noise figure, 26 dBm output third-order intercept (OIP3), and 20 dBm of output power for 1 dB compression (P1dB) while requiring 53 mA from a 5 V supply. The ADL9006 is self-biased, with only a single positive supply needed to achieve a supply current (I_DD) of 53 mA.

The ADL9006 amplifier input and output are internally matched to 50 Ω.

The ADL9006CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates from 2 GHz to 28 GHz. The amplifier provides 15.5 dB of gain, 2.2 dB of noise figure, 24 dBm of output third-order intercept (IP3), 20 dBm of output saturated power (P_SAT), and 19 dB of power output for 1 dB compression (P1dB) while requiring a 55 mA power supply current (I_DD) from a 5 V total supply voltage. The ADL9006CHIPS is self-biased, with only a single positive supply needed to achieve an I_DD of 55 mA.

The ADL9006CHIPS amplifier input and output are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs).

Block Diagrams and Graphs